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1

Interaction of Radiation-Induced Self-Interstitials with Vacancy-Oxygen Related Defects V n O 2 (n from 1 to 3) in Silicon

Murin, Leonid I., Tolkacheva, Ekaterina A., Lastovskii, Stanislau B., Markevich, Vladimir P., Mullins, Jack, Peaker, Anthony R., Svensson, Bengt G.

Journal:

physica status solidi (a)

Year:

2018

Language:

english

File:

PDF, 557 KB

english, 2018

2

Identification of the mechanism responsible for the boron oxygen light induced degradation in silicon photovoltaic cells

Vaqueiro-Contreras, Michelle, Markevich, Vladimir P., Coutinho, José, Santos, Paulo, Crowe, Iain F., Halsall, Matthew P., Hawkins, Ian, Lastovskii, Stanislau B., Murin, Leonid I., Peaker, Anthony R.

Journal:

Journal of Applied Physics

Year:

2019

Language:

english

File:

PDF, 2.93 MB

english, 2019

3

Effect of pressure on oxygen diffusion jump in Si: quantum-chemical simulations

Vasilii Gusakov, Leonid Murin

Journal:

Physica B: Condensed Matter

Year:

2003

Language:

english

File:

PDF, 189 KB

english, 2003

4

Interactions of Self-Interstitials with Interstitial Carbon-Interstitial Oxygen Center in Irradiated Silicon: An Infrared Absorption Study

Murin, Leonid I., Svensson, Bengt G., Markevich, Vladimir P., Peaker, Anthony R.

Journal:

Solid State Phenomena

Year:

2013

Language:

english

File:

PDF, 338 KB

english, 2013

5

Radiation damage in silicon exposed to high-energy protons

Davies, Gordon, Hayama, Shusaku, Murin, Leonid, Krause-Rehberg, Reinhard, Bondarenko, Vladimir, Sengupta, Asmita, Davia, Cinzia, Karpenko, Anna

Journal:

Physical Review B

Year:

2006

Language:

english

File:

PDF, 193 KB

english, 2006

6

[ECS ISTC/CSTIC 2009 (CISTC) - Shanghai, China (March 19 - March 20, 2009)] ECS Transactions - Interactions of Cu and Ni Impurities with Vacancy-related Point Defects in Czochralski-grown Si Crystals

Markevich, Vladimir, Peaker, Anthony R., Medvedeva, Irina F., Gusakov, Vasilii E., Murin, Leonid I., Svensson, Bengt G.

Year:

2009

Language:

english

File:

PDF, 440 KB

english, 2009

7

The Trivacancy and Trivacancy-Oxygen Family of Defects in Silicon

Markevich, Vladimir P., Peaker, Anthony R., Hamilton, Bruce, Lastovskii, S.B., Murin, Leonid I., Coutinho, Jose, Rayson, Mark J., Briddon, Patrick R., Svensson, Bengt G.

Journal:

Solid State Phenomena

Year:

2013

Language:

english

File:

PDF, 1.63 MB

english, 2013

8

Structure, Electronic Properties and Annealing Behavior of Di-Interstitial-Oxygen Center in Silicon

Markevich, Vladimir P., Peaker, Anthony R., Hamilton, Bruce, Gusakov, Vasilii E., Lastovskii, Stanislav B., Murin, Leonid I., Ganagona, Naveengoud, Monakhov, E.V., Svensson, Bengt G.

Journal:

Solid State Phenomena

Year:

2015

Language:

english

File:

PDF, 443 KB

english, 2015

9

Radiation-induced interstitial carbon atom in silicon: Effect of charge state on annealing characteristics

Lastovskii, Stanislau B., Gusakov, Vasilii E., Markevich, Vladimir P., Peaker, Anthony R., Yakushevich, Hanna S., Korshunov, Fedor P., Murin, Leonid I.

Journal:

physica status solidi (a)

Year:

2017

Language:

english

File:

PDF, 609 KB

english, 2017

10

The di-interstitial in silicon: Electronic properties and interactions with oxygen and carbon impurity atoms

Gusakov, Vasilii E., Lastovskii, Stanislau B., Murin, Leonid I., Tolkacheva, Ekaterina A., Khirunenko, Lyudmila I., Sosnin, Mikhail G., Duvanskii, Andrei V., Markevich, Vladimir P., Halsall, Matthew P

Journal:

physica status solidi (a)

Year:

2017

Language:

english

File:

PDF, 525 KB

english, 2017

11

Identification of the mechanism responsible for the boron oxygen light induced degradation in silicon photovoltaic cells

Vaqueiro-Contreras, Michelle, Markevich, Vladimir P., Coutinho, José, Santos, Paulo, Crowe, Iain F., Halsall, Matthew P., Hawkins, Ian, Lastovskii, Stanislau B., Murin, Leonid I., Peaker, Anthony R.

Journal:

Journal of Applied Physics

Year:

2019

File:

PDF, 2.93 MB

2019